TELLURIUM AND SELENIUM SELECTIVE ABSORBER THIN-FILMS PRODUCED BY GAS-EVAPORATION METHODS

被引：7

作者：

COCKS, FH

PETERSON, MJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The production of Te and Se thin films by evaporation carried out under pressures of argon gas ranging from 1 atm to 0. 1 Torr has been investigated and the selective absorption characteristics of the resultant Te and Se films determined. Absorptivities (a) in excess of 97% have been found in Te films deposited in 1 Torr of argon. Absorptivities of gas evaporated Se films did not rise above 60%. Emissivities (e) of Se films were also high, over 20%. Emissivities of Te thin films were less than 10% in most instances. Maximum a/e values of 12:1 were obtained for Te films deposited at an argon pressure of 10 Torr.

引用

页码：1560 / 1563

页数：4

共 9 条

[1]

BYLANDER EG, 1977, MATERIALS SEMICONDUC

[2]

DONALD C, 1977, J VAC SCI TECHNOL, V14, P259

[3] AN ELECTRON MICROSCOPE AND ELECTRON DIFFRACTION STUDY OF FINE SMOKE PARTICLES PREPARED BY EVAPORATION IN ARGON GAS AT LOW PRESSURES (2) [J].