AUGER-ELECTRON SPECTROSCOPY STUDY ON THE STABILITY OF THE INTERFACE BETWEEN DEPOSITED CU9AL4 INTERMETALLIC COMPOUND FILM AND SI

被引：4

作者：

NOYA, A

SASAKI, K

OHTAKA, S

SASAO, N

机构：

[1] Department of Electronic Engineering, Kitami Institute of Technology, Kitami

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 4A期

关键词：

THIN FILM; INTERMETALLIC COMPOUND; CU9AL4; METALLIZATION MATERIAL; INTERFACE;

D O I：

10.1143/JJAP.30.L632

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interaction of deposited Cu9Al4 intermetallic compound film with a silicon substrate is studied by Auger electron spectroscopy. Although the incorporation of silicon into the Cu9Al4 film with low concentration level is observed, the interface is stable up to the annealing temperature of 700-degrees-C without forming aluminum spikes or a copper silicide layer. It is revealed that Cu9Al4 film is a useful material to realize a stable interface when employed as a metallization material for silicon devices.

引用

页码：L632 / L635

页数：4

共 6 条

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NOYA, A
SASAKI, K
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[3] NOYA A, 1991, JPN J APPL PHYS, V30, pL1141
[4] D-METAL AND F-METAL INTERFACE FORMATION ON SILICON
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[5] Sasaki K., 1989, Transactions of the Institute of Electronics, Information and Communication Engineers C-II, VJ72C-II, P577
[6] STOICHIOMETRY OF TA-N FILM AND ITS APPLICATION FOR DIFFUSION BARRIER IN THE AL3TA/TA-N/SI CONTACT SYSTEM
SASAKI, K
NOYA, A
UMEZAWA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (06): : 1043 - 1047

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