INTERACTION OF AL3TA INTERMETALLIC COMPOUND FILM WITH SI

被引：2

作者：

NOYA, A

SASAKI, K

UMEZAWA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 12期

关键词：

D O I：

10.1143/JJAP.27.L2262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2262 / L2264

页数：3

共 5 条

[1] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS
MCCALDIN, JO
SANKUR, H
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &
[2] APPLICATION OF AUGER-ELECTRON SPECTROSCOPY TO STUDIES OF SILICON-SILICIDE INTERFACE
ROTH, JA
CROWELL, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1317 - 1324
[3] SOLID-PHASE EPITAXIAL-GROWTH OF SI MESAS FROM AL METALLIZATION
SANKUR, H
MCCALDIN, JO
DEVANEY, J
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (02) : 64 - 66
[4] PREPARATION AND CHARACTERIZATIONS OF AL3TA INTERMETALLIC COMPOUND FILMS
SASAKI, K
NOYA, A
UMEZAWA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (07): : 1190 - 1192
[5] BARRIER LAYERS - PRINCIPLES AND APPLICATIONS IN MICROELECTRONICS
WITTMER, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 273 - 280