REGROWTH RATES AND DOPANT ACTIVATION OF SB+-IMPLANTED SI-GE ALLOYS

被引：11

作者：

HONG, SQ

HONG, QZ

MAYER, JW

机构：

[1] Department of Materials Science and Engineering, Cornell University, Ithaca

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 08期

关键词：

D O I：

10.1063/1.352282

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial regrowth and dopant activation of Sb-implanted Si and Si0.93Ge0.07 were investigate with ion channeling techniques and transmission electron microscopy. The presence of Sb greatly enhanced the regrowth rate of both Si and Sio.93Ge0.07. The initial crystallinity of Si0.93Ge0.07 was fully recovered after furnace annealing at 500-550-degrees-C. Approximately 95% of Sb atoms were found on substitutional sites and most of them were electrically active.

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页码：3821 / 3823

页数：3

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