RAPID THERMAL ANNEALING OF SHALLOW SB-IMPLANTED SI

被引：3

作者：

RIDGWAY, MC

WHITTON, JL

SCANLON, PJ

NAEM, AA

机构：

[1] QUEENS UNIV,DEPT PHYS,KINGSTON K7L 3N6,ONTARIO,CANADA

[2] NO TELECOM ELECTR LTD,OTTAWA,ONTARIO,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 07期

关键词：

D O I：

10.1063/1.341478

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3456 / 3460

页数：5

共 19 条

[1] ANNEALING OF ANTIMONY IMPLANTED SILICON WITH HALOGEN LAMP IRRADIATION [J].

BORISENKO, VE ;

LABUNOV, VA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02) :K173-K176

[2] LOW-ENERGY ANTIMONY IMPLANTATION IN SILICON .1. PROFILE MEASUREMENTS AND CALCULATION [J].

CHU, WK ;

KASTL, RH ;

MURLEY, PC .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4) :1-6

[3] INFLUENCE OF AN OXIDIZING ANNEALING AMBIENT ON DISTRIBUTION OF AS, SB, AND GA IMPLANTED INTO SILICON [J].

MULLER, H ;

GYULAI, J ;

CHU, WK ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) :1234-1238

[4] SOLID-PHASE-EPITAXIAL GROWTH AND FORMATION OF METASTABLE ALLOYS IN ION-IMPLANTED SILICON [J].

NARAYAN, J ;

HOLLAND, OW ;

APPLETON, BR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :871-887

[5] ANNEALING OF ARSENIC-IMPLANTED AND ANTIMONY-IMPLANTED SILICON SINGLE-CRYSTALS USING A CW XENON ARC LAMP [J].

LARSEN, AN ;

CORRERA, L .

RADIATION EFFECTS LETTERS, 1983, 76 (03) :67-72

[6]

Nylandsted-Larsen A., 1986, J APPL PHYS, V59, P1908

[7] METASTABLE SOLID-SOLUTIONS OF ANTIMONY IN (100)SILICON [J].

POGANY, AP ;

PREUSS, T ;

SHORT, KT ;

WAGENFELD, HK ;

WILLIAMS, JS .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :731-736

[8]

Sai-Halasz G. A., 1983, IBM Technical Disclosure Bulletin, V26, P3018

[9] DEVICE-GRADE ULTRA-SHALLOW JUNCTIONS FABRICATED WITH ANTIMONY [J].

SAIHALASZ, GA ;

HARRISON, HB .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :534-536

[10] ANTIMONY AND ARSENIC SEGREGATION AT SI-SIO2 INTERFACES [J].

SAIHALASZ, GA ;

SHORT, KT ;

WILLIAMS, JS .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) :285-287

← 1 2 →