ANNEALING OF ARSENIC-IMPLANTED AND ANTIMONY-IMPLANTED SILICON SINGLE-CRYSTALS USING A CW XENON ARC LAMP

被引：4

作者：

LARSEN, AN ^{[1
]}

CORRERA, L ^{[1
]}

机构：

[1] CNR,IST LAMEL,I-40126 BOLOGNA,ITALY

来源：

RADIATION EFFECTS LETTERS | 1983年 / 76卷 / 03期

关键词：

D O I：

10.1080/01422448308209639

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：67 / 72

页数：6

共 16 条

[1]

BORISENKO VE, 1982, PHYS STATUS SOLIDI A, V72, pK171

[2] RADIATION-DAMAGE IN SILICON PRODUCED BY PHOSPHORUS IMPLANTATION - RANDOM AND ALIGNED IMPLANTS [J].

CEMBALI, F ;

DORI, L ;

GALLONI, R ;

SERVIDORI, M ;

ZIGNANI, F .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (1-2) :111-117

[3]

CHU WK, 1978, BACKSCATTERING SPECT, P268

[4]

CHU WK, 1980, LASER ELECTRON BEAM, P361

[5] ANNEALING OF PHOSPHORUS IMPLANTED SILICON BY INCOHERENT-LIGHT SCANNING [J].

CORRERA, L ;

PEDULLI, L .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 63 (1-4) :187-190

[6]

DEARNALEY G, 1973, ION IMPLANTATION, P778

[7] ARSENIC-IMPLANTED SI LAYERS ANNEALED USING A CW XE ARC LAMP [J].

DROWLEY, C ;

HU, C .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :876-878

[8] HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP [J].

GAT, A .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :85-87

[9] SOLAR FURNACE ANNEALING OF AMORPHOUS SI LAYERS [J].

LAU, SS ;

ALLMEN, MV ;

GOLECKI, I ;

NICOLET, MA ;

KENNEDY, EF ;

TSENG, WF .

APPLIED PHYSICS LETTERS, 1979, 35 (04) :327-329

[10] TEMPERATURE RISE INDUCED IN SI BY CONTINUOUS XENON ARC LAMP RADIATION [J].

LIETOILA, A ;

GOLD, RB ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1169-1172

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