TEMPERATURE RISE INDUCED IN SI BY CONTINUOUS XENON ARC LAMP RADIATION

被引：13

作者：

LIETOILA, A

GOLD, RB

GIBBONS, JF

机构：

[1] Stanford Electronics Laboratories, Stanford, CA 94305, United States

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330566

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1169 / 1172

页数：4

共 21 条

[1]

CARSLAW HS, 1959, CONDUCTION HEAT SOLI, P11

[2] ARSENIC-IMPLANTED SI LAYERS ANNEALED USING A CW XE ARC LAMP [J].

DROWLEY, C ;

HU, C .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :876-878

[3]

FERRIS SD, 1979, AIP C P, V50

[4] HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP [J].

GAT, A .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :85-87

[5]

GIBBONS JF, 1981, LASER ELECTRON BEAM, P449

[6]

JOHNSON NM, 1979, AIP C P, V50, P550

[7]

Kokorowski S. A., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P139

[8] TEMPERATURE RISE INDUCED BY A LASER-BEAM .2. NON-LINEAR CASE [J].

LAX, M .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :786-788

[9] TEMPERATURE RISE INDUCED BY A LASER-BEAM [J].

LAX, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3919-3924

[10]

LEE KF, 1981, THESIS STANFORD U

← 1 2 3 →