INFLUENCE OF AN OXIDIZING ANNEALING AMBIENT ON DISTRIBUTION OF AS, SB, AND GA IMPLANTED INTO SILICON

被引：25

作者：

MULLER, H

GYULAI, J

CHU, WK

MAYER, JW

SIGMON, TW

机构：

[1] CALTECH,PASADENA,CA 91125

[2] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 09期

关键词：

D O I：

10.1149/1.2134432

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1234 / 1238

页数：5

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