SOLID-PHASE EPITAXIAL REGROWTH OF SI1-XGEX/SI STRAINED-LAYER STRUCTURES AMORPHIZED BY ION-IMPLANTATION

被引：33

作者：

CHILTON, BT ^{[1
]}

ROBINSON, BJ ^{[1
]}

THOMPSON, DA ^{[1
]}

JACKMAN, TE ^{[1
]}

BARIBEAU, JM ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,MICROSTRUCT SCI LAB,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.100828

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：42 / 44

页数：3

共 8 条

[1]

BALL CAB, 1983, DISLOCATIONS SOLIDS

[2] GROWTH AND CHARACTERIZATION OF SI1-XGEX AND GE EPILAYERS ON (100) SI [J].

BARIBEAU, JM ;

JACKMAN, TE ;

HOUGHTON, DC ;

MAIGNE, P ;

DENHOFF, MW .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (12) :5738-5746

[3]

DAVIES JA, IN PRESS VACUUM

[4]

MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[5] MEV HE BACKSCATTERING ANALYSIS OF ION-IMPLANTED SI - DRIVE-IN DIFFUSION AND EPITAXIAL REGROWTH [J].

MAYER, JW ;

CSEPREGI, L ;

GYULAI, J ;

NAGY, T ;

MEZEY, G ;

REVESZ, P ;

KOTAI, E .

THIN SOLID FILMS, 1976, 32 (02) :303-306

[6] CALCULATION OF CRITICAL LAYER THICKNESS VERSUS LATTICE MISMATCH FOR GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].

PEOPLE, R ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :322-324

[7] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].

TRUMBORE, FA .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233

[8] CRITICAL STRESSES FOR SIXGE1-X STRAINED-LAYER PLASTICITY [J].

TSAO, JY ;

DODSON, BW ;

PICRAUX, ST ;

CORNELISON, DM .

PHYSICAL REVIEW LETTERS, 1987, 59 (21) :2455-2458

← 1 →