MEV HE BACKSCATTERING ANALYSIS OF ION-IMPLANTED SI - DRIVE-IN DIFFUSION AND EPITAXIAL REGROWTH

被引:6
作者
MAYER, JW
CSEPREGI, L
GYULAI, J
NAGY, T
MEZEY, G
REVESZ, P
KOTAI, E
机构
[1] CENT RES INST PHYS,BUDAPEST,HUNGARY
[2] CALTECH,PASADENA,CA 91109
关键词
D O I
10.1016/0040-6090(76)90318-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:303 / 306
页数:4
相关论文
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