DIRECT BONDING OF LITAO3 SINGLE-CRYSTALS

被引：6

作者：

TOMITA, Y ^{[1
]}

SUGIMOTO, M ^{[1
]}

EDA, K ^{[1
]}

OKANO, T ^{[1
]}

机构：

[1] MATSUSHITA TECHNORES INC, MORIGUCHI, OSAKA 570, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 11A期

关键词：

DIRECT BONDING; LITHIUM TANTALATE (LITAO3); FERROELECTRIC SINGLE CRYSTALS; INTERFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPE (TEM) OBSERVATION;

D O I：

10.1143/JJAP.33.L1542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new fabrication method for combining lithium tantalate single crystals by direct bonding without using bonding agents has been developed. The bonded interface was found to be very uniform, and bonding on an atomic scale was achieved in spite of a relatively low heat-treatment temperature of 350 degrees C. This method is very promising for realizing new stacked structures and new fabrication processes for piezoelectric and electrooptic devices, such for a layer of ferroelectric single crystal on insulator or semiconductor.

引用

页码：L1542 / L1544

页数：3

共 7 条

[1] SILICON-WAFER BONDING MECHANISM FOR SILICON-ON-INSULATOR STRUCTURES [J].