A STOCHASTIC-MODEL FOR DIELECTRIC-BREAKDOWN IN THIN CAPACITORS

被引：7

作者：

WILLMING, DA ^{[1
]}

WU, CH ^{[1
]}

机构：

[1] UNIV MISSOURI,DEPT ELECT ENGN,ROLLA,MO 65401

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.340263

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：456 / 459

页数：4

共 13 条

[1] A NEW MODEL FOR DIELECTRIC-BREAKDOWN PHENOMENON IN SILICON DIOXIDE FILMS [J].

CHEN, DN ;

CHENG, YC .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1592-1600

[2]

CHEN IC, 1985, IEEE J SOLID-ST CIRC, V20, P333

[3] DIELECTRIC-BREAKDOWN IN ELECTRICALLY STRESSED THIN-FILMS OF THERMAL SIO2 [J].

HARARI, E .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2478-2489

[4] ON PHYSICAL MODELS FOR GATE OXIDE BREAKDOWN [J].

HOLLAND, S ;

CHEN, IC ;

MA, TP ;

HU, C .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :302-305

[5] LATTICE-DYNAMICS, RANDOM-WALKS, AND NON-INTEGRAL EFFECTIVE DIMENSIONALITY [J].

HUGHES, BD ;

SHLESINGER, MF .

JOURNAL OF MATHEMATICAL PHYSICS, 1982, 23 (09) :1688-1692

[6]

Mandelbrot BB., 1977, FRACTALS FORM CHANCE

[7] FRACTAL DIMENSION OF DIELECTRIC-BREAKDOWN [J].

NIEMEYER, L ;

PIETRONERO, L ;

WIESMANN, HJ .

PHYSICAL REVIEW LETTERS, 1984, 52 (12) :1033-1036

[8]

Scarborough J. B., 1966, NUMERICAL MATH ANAL

[9]

SKITEK GG, 1982, ELECTROMAGNETIC CONC, pCH7

[10] OCCUPANCY-PROBABILITY SCALING IN DIFFUSION-LIMITED AGGREGATION [J].

TURKEVICH, LA ;

SCHER, H .

PHYSICAL REVIEW LETTERS, 1985, 55 (09) :1026-1029

← 1 2 →