THE CROSS CONTAMINATION PROBLEM IN A1GAAS/INGAP/A1GAAS LIQUID-PHASE EPITAXY

被引:5
作者
CHANG, LB [1 ]
CHENG, KY [1 ]
LIU, CC [1 ]
机构
[1] CHUNG CHENG INST TECHNOL, DEPT ELECT ENGN, DAXI, TAIWAN
关键词
D O I
10.1002/crat.2170241224
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:K213 / K218
页数:6
相关论文
共 3 条
[1]   GROWTH OF IN0.5GA0.5P ON GAAS BY LPE - THE INFLUENCE OF GROWTH TEMPERATURE AND LATTICE MISMATCH ON PHOTOLUMINESCENCE [J].
CHANG, LB ;
CHENG, KY ;
LIU, CC .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (07) :1145-1150
[2]   FABRICATION AND LASING CHARACTERISTICS OF 0.67 MU-M GAINASP/ALGAAS VISIBLE LASERS PREPARED BY LIQUID-PHASE EPITAXY ON (100) GAAS SUBSTRATES [J].
KISHINO, K ;
HARADA, A ;
KANEKO, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (02) :180-187
[3]   THE FABRICATION OF SINGLE HETEROJUNCTION ALGAAS INGAP ELECTROLUMINESCENT DIODES [J].
SU, YK ;
WU, MC ;
CHANG, CY ;
CHENG, KY .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2541-2544