GROWTH OF IN0.5GA0.5P ON GAAS BY LPE - THE INFLUENCE OF GROWTH TEMPERATURE AND LATTICE MISMATCH ON PHOTOLUMINESCENCE

被引:14
作者
CHANG, LB
CHENG, KY
LIU, CC
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 07期
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D O I
10.1143/JJAP.27.1145
中图分类号
O59 [应用物理学];
学科分类号
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页码:1145 / 1150
页数:6
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