ELECTROREFLECTANCE STUDY OF THE E(1) AND E(0) OPTICAL-TRANSITIONS IN THIN GE/SI SUPERLATTICES

被引：11

作者：

RODRIGUES, PAM

CERDEIRA, F

CARDONA, M

KASPER, E

KIBBEL, H

机构：

[1] DAIMLER BENZ RES CTR,W-7900 ULM,GERMANY

[2] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 86卷 / 10期

基金：

巴西圣保罗研究基金会;

关键词：

D O I：

10.1016/0038-1098(93)90830-G

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report low temperature (77 K) electroreflectance measurements on a series of Ge(n) Si(m) strain-symmetrized superlattices. The results obtained for samples with n + m less-than-or-equal-to 10 are consistent with band structure calculations performed using the linear muffin-tin orbitals method as well as data from previous ellipsometric measurements. Results for superlattices with n + m greater-than-or-equal-to 20 can be explained by a straightforward extension of this conceptual scheme.

引用

页码：637 / 642

页数：6

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