SURFACE PHOTOVOLTAGE SPECTROSCOPY AND SURFACE PIEZOELECTRIC EFFECT IN GAAS

被引：50

作者：

LAGOWSKI, J

BALTOV, I

GATOS, HC

机构：

[1] POLISH ACAD SCI,INST PHYS,WARSAW,POLAND

[2] MIT,DEPT MET & MAT SCI,CAMBRIDGE,MA 02139

来源：

关键词：

D O I：

10.1016/0039-6028(73)90064-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：216 / 226

页数：11

共 13 条

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GATOS, HC
LAGOWSKI, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (01): : 130 - 135
[4] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS
GATOS, HC
LAVINE, MC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433
[5] HILSUM C, 1961, SEMICONDUCTING III V
[6] ELECTRONIC CHARACTERISTICS OF REAL CDS SURFACES
LAGOWSKI, J
GATOS, HC
BALESTRA, CL
[J]. SURFACE SCIENCE, 1972, 29 (01) : 213 - &
[7] ROLE OF SURFACE TRAPPING IN PHOTOVOLTAGE SPECTROSCOPY
LAGOWSKI, J
GATOS, HC
[J]. SURFACE SCIENCE, 1973, 38 (01) : 252 - 256
[8] SURFACE PIEZOELECTRIC EFFECT IN NON-CENTROSYMMETRIC SEMICONDUCTORS - CDS
LAGOWSKI, J
GATOS, HC
[J]. SURFACE SCIENCE, 1972, 30 (02) : 491 - &
[9] LAGOWSKI J, UNPUBLISHED RESULTS
[10] LAGOWSKI J, 1972, P INT C SEMICONDUCTO, P1462