PARADOXICAL PREDICTIONS AND A MINIMUM FAILURE TIME IN ELECTROMIGRATION

被引:10
作者
FILIPPI, RG
BIERY, GA
WACHNIK, RA
机构
关键词
D O I
10.1063/1.113314
中图分类号
O59 [应用物理学];
学科分类号
摘要
A paradox arises when the two-parameter log-normal distribution is used to predict early electromigration lifetimes of a two-level structure with Ti-AlCu-Ti stripes and interlevel W stud-vias. The paradox is a direct consequence of the observed increase in the log-normal sigma (σ) as the current density decreases and/or as the maximum allowed resistance change increases. The increase in σ implies that the first failures from equal and large sample sizes are expected to occur at low current densities rather than at high current densities. Similarly, for example, samples at relatively low cumulative failure are expected to fail at high levels of resistance change before failing at low levels of resistance change. This apparent paradox is resolved by testing a large set of samples and fitting the failure data to the three-parameter log-normal distribution. The third parameter, an incubation time or a minimum time required before failure can occur, is shown to increase as the maximum allowed resistance change increases.© 1995 American Institute of Physics.
引用
收藏
页码:1897 / 1899
页数:3
相关论文
共 10 条
[1]   DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURE TIME ON LENGTH AND WIDTH OF ALUMINUM THIN-FILM CONDUCTORS [J].
AGARWALA, BN ;
ATTARDO, MJ ;
INGRAHAM, AP .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :3954-&
[2]  
BLACK JR, 1978, 16TH IEEE ANN P REL, P233
[3]  
BOWER RW, 1973, APPL PHYS LETT, V23, P99, DOI 10.1063/1.1654823
[4]   ELECTROMIGRATION IN AL/SI CONTACTS - INDUCED OPEN-CIRCUIT FAILURE [J].
CHERN, JGJ ;
OLDHAM, WG ;
CHEUNG, N .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) :1256-1262
[5]  
FILIPPI RG, 1993, MATER RES SOC SYMP P, V309, P141, DOI 10.1557/PROC-309-141
[6]  
HU CK, 1991, MATER RES SOC SYMP P, V225, P99, DOI 10.1557/PROC-225-99
[7]   ELECTROMIGRATION IN AL(CU) 2-LEVEL STRUCTURES - EFFECT OF CU AND KINETICS OF DAMAGE FORMATION [J].
HU, CK ;
SMALL, MB ;
HO, PS .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (02) :969-978
[8]   1/F NOISE AND GRAIN-BOUNDARY DIFFUSION IN ALUMINUM AND ALUMINUM-ALLOYS [J].
KOCH, RH ;
LLOYD, JR ;
CRONIN, J .
PHYSICAL REVIEW LETTERS, 1985, 55 (22) :2487-2490
[9]   EXPERIMENTAL-STUDY OF ELECTROMIGRATION IN BICRYSTAL ALUMINUM LINES [J].
LONGWORTH, HP ;
THOMPSON, CV .
APPLIED PHYSICS LETTERS, 1992, 60 (18) :2219-2221
[10]  
WOOD MH, 1991, 29 ANN P REL PHYS 19, P70