FORMATION OF A PN JUNCTION ON AN ANISOTROPICALLY ETCHED GAAS SURFACE USING METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：4

作者：

LEON, RP

BAILEY, SG

MAZARIS, GA

WILLIAMS, WD

机构：

来源：

关键词：

D O I：

10.1063/1.97491

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：945 / 947

页数：3

共 12 条

[1] CHEMICAL ETCHING CHARACTERISTICS OF (001)GAAS [J].

ADACHI, S ;

OE, K .

[2]

ARNDT RA, 1973, 11TH PHOT SPEC C, P40

[3]

FAHRENBRUCH AL, 1983, FUNDAMENTALS SOLAR C

[4]

Fonash S.J., 1981, SOLAR CELL DEVICE PH

[5]

FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P150

[6]

HOLM PM, 1984, 17TH IEEE PHOT SPEC, P921

[7] CHARGE COLLECTION SCANNING ELECTRON-MICROSCOPY [J].

LEAMY, HJ .

[8]

PANG SW, 1984, SOLID STATE TECHNOL, V27, P249

REEP, DH ;

GHANDHI, SK .

[10] THE DESIGN OF ANISOTROPICALLY ETCHED-III-V SOLAR-CELLS [J].

ROEDEL, RJ ;

HOLM, PM .

SOLAR CELLS, 1984, 11 (03) :221-239