ELECTRON MICROSCOPE CHARACTERIZATION OF DEFECTS ON GASEOUS-ETCHED SILICON SURFACES

被引：3

作者：

LEVIN, ER

DISMUKES, JP

COUTTS, MD

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 07期

关键词：

D O I：

10.1149/1.2408275

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1171 / &

共 37 条

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