MODEL FOR EFFECT OF VOIDS ON OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON

被引：7

作者：

LEWIS, A ^{[1
]}

机构：

[1] UNIV MARYLAND,COLLEGE PK,MD 20742

来源：

关键词：

D O I：

10.1016/S0038-1098(73)80010-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：547 / 551

页数：5

共 20 条

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[10] EVIDENCE FOR MOTT MODEL OF HOPPING CONDUCTION IN ANNEAL STABLE STATE OF AMORPHOUS SILICON
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