THE EFFECTS OF FILM GEOMETRY ON THE PROPERTIES OF FETAN FILMS

被引：14

作者：

GAN, Q

BARNARD, JA

机构：

[1] Department of Metallurgical and Materials Engineering, University of Alabama, Tuscaloosa

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.356786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

FeTaN single layer and FeTaN/SiO2 multilayer films were grown by high rate reactive dc magnetron sputtering. The film geometry (FeTaN layer thickness, SiO2 spacer thickness, and number of bilayer units) dependence of the structure, magnetic properties and high-frequency permeability characteristics were investigated.

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收藏

页码：6934 / 6936

页数：3

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