TRANSIENT PHOTOCONDUCTIVITY STUDIES IN A-SI-H

被引：4

作者：

PICKIN, W

MENDOZA, D

ALONSO, JC

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90140-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：599 / 602

页数：4

共 7 条

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IBARAKI, N .

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[2] THE RELATIONSHIP BETWEEN TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS [J].

KASTNER, MA ;

MONROE, D .

SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :41-52

[3] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].

LANG, DV ;

COHEN, JD ;

HARBISON, JP .

PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320

[4] GAP STATES IN PHOSPHORUS-DOPED AMORPHOUS-SILICON STUDIED BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY [J].

OKUSHI, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (01) :33-57

[5]

PICKIN W, 1987, IN PRESS P MAT RES S

[6] ORIGIN OF THE NONEXPONENTIAL PHOTOCURRENT DECAY IN AMORPHOUS-SEMICONDUCTORS [J].

SHIMAKAWA, K ;

YANO, Y ;

KATSUMA, Y .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (04) :285-299

[7] RECOMBINATION IN A-SI-H - TRANSITIONS THROUGH DEFECT STATES [J].

STREET, RA ;

BIEGELSEN, DK ;

WEISFIELD, RL .

PHYSICAL REVIEW B, 1984, 30 (10) :5861-5870

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