RECOMBINATION IN A-SI-H - TRANSITIONS THROUGH DEFECT STATES

被引：86

作者：

STREET, RA

BIEGELSEN, DK

WEISFIELD, RL

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.30.5861

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5861 / 5870

页数：10

共 31 条

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON
ANDERSON, DA
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712
[2] BIEGELSEN DK, 1980, SOL CELLS, V2, P421, DOI 10.1016/0379-6787(80)90018-6
[3] BIEGELSEN DK, 1981, TETRAHEDRALLY BONDED, P166
[4] CHADI DJ, COMMUNICATION
[5] CRITERION FOR THE OCCURRENCE OF LUMINESCENCE
DEXTER, DL
KLICK, CC
RUSSELL, GA
[J]. PHYSICAL REVIEW, 1955, 100 (02): : 603 - 605
[6] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
HENRY, CH
LANG, DV
[J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
[7] DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
HVAM, JM
BRODSKY, MH
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (05) : 371 - 374
[8] ANOMALOUS SURFACE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON
JACKSON, WB
STREET, RA
THOMPSON, MJ
[J]. SOLID STATE COMMUNICATIONS, 1983, 47 (06) : 435 - 438
[9] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
JACKSON, WB
AMER, NM
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562
[10] ENERGY-DEPENDENCE OF THE CARRIER MOBILITY-LIFETIME PRODUCT IN HYDROGENATED AMORPHOUS-SILICON
JACKSON, WB
NEMANICH, RJ
AMER, NM
[J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4861 - 4871