RECOMBINATION IN A-SI-H - TRANSITIONS THROUGH DEFECT STATES

被引：86

作者：

STREET, RA

BIEGELSEN, DK

WEISFIELD, RL

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.30.5861

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5861 / 5870

页数：10

共 31 条

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[16] A MODEL FOR THE ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON
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[17] DUAL-BEAM PHOTOCONDUCTIVITY MODULATION SPECTROSCOPY IN A-SI-H
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[19] LUMINESCENCE AND ELECTRON-SPIN-RESONANCE STUDIES OF DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
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BIEGELSEN, DK
[J]. SOLID STATE COMMUNICATIONS, 1980, 33 (12) : 1159 - 1162
[20] RECOMBINATION IN ALPHA-SI-H - AUGER EFFECTS AND NON-GEMINATE RECOMBINATION
STREET, RA
[J]. PHYSICAL REVIEW B, 1981, 23 (02): : 861 - 868

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