EFFECT OF NEUTRAL IMPURITY ON THE MICROWAVE CONDUCTIVITY AND DIELECTRIC CONSTANT OF GERMANIUM AT LOW TEMPERATURES

被引：50

作者：

DALTROY, FA

FAN, HY

机构：

来源：

PHYSICAL REVIEW | 1956年 / 103卷 / 06期

关键词：

D O I：

10.1103/PhysRev.103.1671

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1671 / 1674

页数：4

共 17 条

[11] MICROWAVE DETERMINATION OF THE AVERAGE MASSES OF ELECTRONS AND HOLES IN GERMANIUM
GOLDEY, JM
BROWN, SC
[J]. PHYSICAL REVIEW, 1955, 98 (06): : 1761 - 1763
[12] RESISTIVITY AND HALL EFFECT OF GERMANIUM AT LOW TEMPERATURES
HUNG, CS
GLIESSMAN, JR
[J]. PHYSICAL REVIEW, 1954, 96 (05): : 1226 - 1236
[13] THEORY OF RESISTIVITY AND HALL EFFECT AT VERY LOW TEMPERATURES
HUNG, CS
[J]. PHYSICAL REVIEW, 1950, 79 (04): : 727 - 728
[14] HUNG CS, 1950, PHYS REV, V79, P351
[15] THEORY OF DONOR AND ACCEPTOR STATES IN SILICON AND GERMANIUM
KITTEL, C
MITCHELL, AH
[J]. PHYSICAL REVIEW, 1954, 96 (06): : 1488 - 1493
[16] THEORY OF DONOR STATES IN SILICON
KOHN, W
LUTTINGER, JM
[J]. PHYSICAL REVIEW, 1955, 98 (04): : 915 - 922
[17] THEORY OF ACCEPTOR LEVELS IN GERMANIUM
KOHN, W
SCHECHTER, D
[J]. PHYSICAL REVIEW, 1955, 99 (06): : 1903 - 1904