SEPARATING THE EFFECTS OF HYDROGEN AND BOND-ANGLE VARIATION ON THE AMORPHOUS-SILICON BAND-GAP

被引：29

作者：

BERNTSEN, AJM ^{[1
]}

VANDERWEG, WF ^{[1
]}

STOLK, PA ^{[1
]}

SARIS, FW ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.48.14656

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of 1-MeV Si+ implantation on the optical band gap E(g) of pure (a-Si) and hydrogenated amorphous silicon (a-Si:H) have been determined. An identical decrease in E(g) of 0.46+/-0.02 eV upon ion implantation is observed for a-Si and a-Si:H. E(g) decreases because the valence and conduction bands broaden upon ion irradiation. Raman scattering shows that the broadening of the energy bands is accompanied by an increase in the average bond-angle variation. Hydrogenation results in a separate increase of E(g) by 0.22+/-0.02 eV for 11 at. % hydrogen.

引用

页码：14656 / 14658

页数：3

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