EFFECT OF HYDROGEN ON DISORDER IN AMORPHOUS-SILICON

被引：8

作者：

JACKSON, WB

TSAI, CC

DOLAND, C

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA, 94304

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1991年 / 64卷 / 05期

关键词：

D O I：

10.1080/13642819108217885

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work the effects of posthydrogenation on amorphous silicon network disorder are investigated. The bond angle distribution as determined from Raman linewidths actually increased slightly when the H concentration was increased from 0.2 to 7 at.% rather than decreasing as expected. The H appears to introduce compressive stress on a number of bonds. Furthermore, H incorporation did not significantly alter the band-tail state density either. The H bonding in a-Si does not decrease the number of weak bonds significantly.

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页码：611 / 622

页数：12

相关论文

共 29 条

[1] STRUCTURE AND ELECTRONIC STATES IN DISORDERED-SYSTEMS [J].

BARYAM, Y ;

ADLER, D ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW LETTERS, 1986, 57 (04) :467-470

[2] STRUCTURAL INFORMATION FROM THE RAMAN-SPECTRUM OF AMORPHOUS-SILICON [J].

BEEMAN, D ;

TSU, R ;

THORPE, MF .

PHYSICAL REVIEW B, 1985, 32 (02) :874-878

[3] HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS [J].

BIEGELSEN, DK ;

STREET, RA ;

TSAI, CC ;

KNIGHTS, JC .

PHYSICAL REVIEW B, 1979, 20 (12) :4839-4846

[4] GENERATION OF AMORPHOUS-SILICON STRUCTURES WITH USE OF MOLECULAR-DYNAMICS SIMULATIONS [J].

BISWAS, R ;

GREST, GS ;

SOUKOULIS, CM .

PHYSICAL REVIEW B, 1987, 36 (14) :7437-7441

[5]

CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11

[6] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON [J].

CODY, GD ;

TIEDJE, T ;

ABELES, B ;

BROOKS, B ;

GOLDSTEIN, Y .

PHYSICAL REVIEW LETTERS, 1981, 47 (20) :1480-1483

[7] ROLE OF HYDROGEN COMPLEXES IN THE METASTABILITY OF HYDROGENATED AMORPHOUS-SILICON [J].

JACKSON, WB .

PHYSICAL REVIEW B, 1990, 41 (14) :10257-10260

[8] ROLE OF BAND-TAIL CARRIERS IN METASTABLE DEFECT FORMATION AND ANNEALING IN HYDROGENATED AMORPHOUS-SILICON [J].

JACKSON, WB .

PHYSICAL REVIEW B, 1990, 41 (02) :1059-1075

[9]

JACKSON WB, 1981, J PHYS-PARIS, V4, P293

[10] ABSENCE OF OXYGEN DIFFUSION DURING HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1985, 46 (08) :787-789