ROLE OF HYDROGEN COMPLEXES IN THE METASTABILITY OF HYDROGENATED AMORPHOUS-SILICON

被引：71

作者：

JACKSON, WB

机构：

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.41.10257

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A microscopic model for metastability in hydrogenated amorphous silicon (a-Si:H) involving two-hydrogen-atom complexes is proposed. Metastable-defect formation occurs when this complex dissociates creating two interstitial H atoms which form Si dangling-bond-like defects at weak-bond sites. Annealing occurs when the H atoms reform complexes. © 1990 The American Physical Society.

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页码：10257 / 10260

页数：4

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