共 8 条
[1]
ELECTRON-CYCLOTRON RESONANCE MICROWAVE DISCHARGES FOR ETCHING AND THIN-FILM DEPOSITION
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1989, 7 (03)
:883-893
[2]
HYDROGEN PLASMA-ETCHING OF SEMICONDUCTORS AND THEIR OXIDES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1982, 20 (01)
:45-50
[3]
ELECTRIC-FIELDS IN A MICROWAVE-CAVITY ELECTRON-CYCLOTRON-RESONANT PLASMA SOURCE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1990, 8 (03)
:2904-2908
[4]
INVESTIGATION OF THE INFLUENCE OF ELECTROMAGNETIC-EXCITATION ON ELECTRON-CYCLOTRON RESONANCE DISCHARGE PROPERTIES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1992, 10 (04)
:1281-1287
[5]
IDENTIFICATION OF VOLATILE PRODUCTS IN LOW-PRESSURE HYDROCARBON ELECTRON-CYCLOTRON-RESONANCE REACTIVE ION ETCHING OF INP AND GAAS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1993, 11 (06)
:2038-2045
[8]
COMPARISON OF CH4/H2/AR REACTIVE ION ETCHING AND ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING OF IN-BASED III-V ALLOYS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1991, 9 (03)
:1421-1432