ELECTRIC-FIELDS IN A MICROWAVE-CAVITY ELECTRON-CYCLOTRON-RESONANT PLASMA SOURCE

被引:20
作者
HOPWOOD, J
WAGNER, R
REINHARD, DK
ASMUSSEN, J
机构
[1] Department of Electrical Engineering, Michigan State University, East Lansing, Michigan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 03期
关键词
D O I
10.1116/1.576647
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A disk-shaped electron cyclotron resonant (ECR) plasma is generated inside a 2.45 GHz, cylindrical microwave cavity. The microwave electric field pattern within the cavity is measured using a microcoaxial probe while a plasma is ignited. TE211, TE3U, and hybrid electromagnetic modes are identified. The radial component of the electric field adjacent to the cavity wall varies in strength from 7 to 46 kV/m. Double Langmuir probe density measurements show little v iriafion in the plasma ion density among the various cavity modes, but discharge stability is clearly dependent on the alignment of cavity electric field patterns with the ECR magnetic field. Emission spectroscopy is used to measure the spatial distribution of ions in the ECR zones (where Langmuir probe measurements are not practical) and the distribution of fluorine radicals in SF6/Ar discharges. Peak ion densities in the ECR region are estimated at 1012cm −3in Ar at 9 × 10 ~4Torr with 250 W of microwave input power. © 1990, American Vacuum Society. All rights reserved.
引用
收藏
页码:2904 / 2908
页数:5
相关论文
共 18 条
[1]  
[Anonymous], 1965, ELECT PROBES
[2]   ELECTRON-CYCLOTRON RESONANCE MICROWAVE DISCHARGES FOR ETCHING AND THIN-FILM DEPOSITION [J].
ASMUSSEN, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :883-893
[3]   THE EXPERIMENTAL TEST OF A MICROWAVE ION-BEAM SOURCE IN OXYGEN [J].
ASMUSSEN, J ;
DAHIMENE, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :328-331
[4]  
BURKE RR, 1988, SOLID STATE TECHNOL, V31, P63
[5]   COAXIAL E-FIELD PROBE FOR HIGH-POWER MICROWAVE MEASUREMENT [J].
BURKHART, S .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1985, 33 (03) :262-265
[6]  
d'Agostino R., 1984, Plasma Chemistry and Plasma Processing, V4, P165, DOI 10.1007/BF00566839
[7]  
HARRINGTON RF, 1961, TIME HARMONIC ELECTR, P204
[8]   EXPERIMENTAL CONDITIONS FOR UNIFORM ANISOTROPIC ETCHING OF SILICON WITH A MICROWAVE ELECTRON-CYCLOTRON RESONANCE PLASMA SYSTEM [J].
HOPWOOD, J ;
REINHARD, DK ;
ASMUSSEN, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1896-1899
[9]   PLASMA-ETCHING WITH A MICROWAVE CAVITY PLASMA DISK SOURCE [J].
HOPWOOD, J ;
DAHIMENE, M ;
REINHARD, DK ;
ASMUSSEN, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :268-271
[10]  
HOPWOOD J, IN PRESS J VAC SCI T