EXPERIMENTAL CONDITIONS FOR UNIFORM ANISOTROPIC ETCHING OF SILICON WITH A MICROWAVE ELECTRON-CYCLOTRON RESONANCE PLASMA SYSTEM

被引：31

作者：

HOPWOOD, J

REINHARD, DK

ASMUSSEN, J

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584197

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1896 / 1899

页数：4

共 9 条

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