ANISOTROPIC ETCHING OF SILICON USING AN SF6/AR MICROWAVE MULTIPOLAR PLASMA

被引：44

作者：

POMOT, C

MAHI, B

PETIT, B

ARNAL, Y

PELLETIER, J

机构：

[1] CNRS, Meylan, Fr, CNRS, Meylan, Fr

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期

关键词：

D O I：

10.1116/1.583437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1 / 5

页数：5

共 22 条

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[10]

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