INFLUENCE OF DELTA-DOPING PROFILE AND INTERFACE ROUGHNESS ON THE TRANSPORT-PROPERTIES OF PSEUDOMORPHIC HETEROSTRUCTURES

被引：16

作者：

DEAVILA, SF ^{[1
]}

SANCHEZROJAS, JL ^{[1
]}

GONZALEZSANZ, F ^{[1
]}

CALLEJA, E ^{[1
]}

MUNOZ, E ^{[1
]}

HIESINGER, P ^{[1
]}

KOHLER, K ^{[1
]}

JANTZ, W ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 07期

关键词：

D O I：

10.1063/1.110992

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thickness effects of the InGaAs channel on photoluminescence and transport properties of delta-doped Al0.3Ga0.7As/In0.3Ga0.7As heterostructures are investigated. The spreading of the Si delta-doping layer is deduced from a comparison of the measured charge with self-consistent calculations assuming a Gaussian Si distribution profile and a definite ionization probability of the Si-related DX centers. With decreasing channel thickness below 80 Angstrom, the effect of the spreading on the sheet carrier concentration increases and the low temperature mobility decreases due to roughness scattering at the In0.3Ga0.7As/GaAs interface. In channels thicker than 80 Angstrom the thickness-independent alloy scattering process dominates.

引用

页码：907 / 909

页数：3

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