THERMAL-STABILITY OF THE CU/TA/PTSI STRUCTURES

被引:15
作者
CHANG, CA
机构
[1] IBM T. J. Watson Research Center, Yorktown Heights
关键词
D O I
10.1063/1.344521
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cu/Ta/PtSi structures are heated between 200 and 700 °C, with Ta as a barrier for improving the thermal stability of Cu/PtSi. A small amount of Cu silicides is observed after a 30-min anneal in N2-H2 at 300-400 °C. This is accompanied by an extensive mixing among the components present, and increasing sheet resistances. By comparing with the reactions of the Cu/Ta/Si, Al/Ta/PtSi, and Al/Ta/Si structures, the mechanisms suggested earlier are supported, with the high affinity of Cu toward Si playing a major role for the low thermal stability of the Cu/PtSi structures with and without various barrier layers.
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页码:7348 / 7350
页数:3
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