THERMAL-STABILITY OF THE CU/PD/SI METALLURGY

[1] FORMATION OF PTSI IN THE PRESENCE OF AL [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1864 - 1868

[2] FORMATION OF PALLADIUM SILICIDE IN THE PRESENCE OF AL WITH AND WITHOUT A CARBON BARRIER LAYER [J]. APPLIED PHYSICS LETTERS, 1989, 54 (17) : 1656 - 1658

[3] THERMAL-STABILITY OF THE CU/PTSI METALLURGY [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) : 2989 - 2992

[4] HOSSACK HH, 1973, J APPL PHYS, V44, P3476

[5] KOSTER U, 1982, J APPL PHYS, V53, P7436, DOI 10.1063/1.330113

[6] COMPOUND FORMATION AND KINETICS IN AL-PD2SI REACTIONS [J]. JOURNAL OF MATERIALS RESEARCH, 1989, 4 (02) : 336 - 342

[7] MURARKA SP, 1983, SILICIDES VLSI APPLI

[8] DIFFUSION-BARRIERS IN LAYERED CONTACT STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 786 - 793

[9] Nicolet MA, 1983, VLSI ELECTRONICS MIC, V6, P330

[10] BARRIER LAYERS - PRINCIPLES AND APPLICATIONS IN MICROELECTRONICS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 273 - 280

[1] FORMATION OF PTSI IN THE PRESENCE OF AL [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 1864 - 1868

[2] FORMATION OF PALLADIUM SILICIDE IN THE PRESENCE OF AL WITH AND WITHOUT A CARBON BARRIER LAYER [J]. APPLIED PHYSICS LETTERS, 1989, 54 (17) : 1656 - 1658

[3] THERMAL-STABILITY OF THE CU/PTSI METALLURGY [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) : 2989 - 2992

[4] HOSSACK HH, 1973, J APPL PHYS, V44, P3476

[5] KOSTER U, 1982, J APPL PHYS, V53, P7436, DOI 10.1063/1.330113

[6] COMPOUND FORMATION AND KINETICS IN AL-PD2SI REACTIONS [J]. JOURNAL OF MATERIALS RESEARCH, 1989, 4 (02) : 336 - 342

[7] MURARKA SP, 1983, SILICIDES VLSI APPLI

[8] DIFFUSION-BARRIERS IN LAYERED CONTACT STRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 786 - 793

[9] Nicolet MA, 1983, VLSI ELECTRONICS MIC, V6, P330

[10] BARRIER LAYERS - PRINCIPLES AND APPLICATIONS IN MICROELECTRONICS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 273 - 280