FORMATION OF PALLADIUM SILICIDE IN THE PRESENCE OF AL WITH AND WITHOUT A CARBON BARRIER LAYER

被引：7

作者：

CHANG, CA

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 17期

关键词：

D O I：

10.1063/1.101411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1656 / 1658

页数：3

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共 14 条

[1] FORMATION OF PTSI IN THE PRESENCE OF W AND AL
CHANG, CA
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (01) : 236 - 238
[2] CHANG CA, IN PRESS APPL PHYS L
[3] CHANG CA, UNPUB
[4] A STUDY OF VANADIUM AS DIFFUSION BARRIER BETWEEN ALUMINUM AND GADOLINIUM SILICIDE CONTACTS
EIZENBERG, M
THOMPSON, RD
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6891 - 6897
[5] APPLICATION OF TI-W BARRIER METALLIZATION FOR INTEGRATED-CIRCUITS
GHATE, PB
BLAIR, JC
FULLER, CR
MCGUIRE, GE
[J]. THIN SOLID FILMS, 1978, 53 (02) : 117 - 128
[6] CONDUCTING TRANSITION-METAL OXIDES - POSSIBILITIES FOR RUO2 IN VLSI METALLIZATION
KRUSINELBAUM, L
WITTMER, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (10) : 2610 - 2614
[7] MERCHANT P, 1984, J VAC SCI TECHNOL A, V2, P273
[8] MURARKA SP, 1983, SILICIDES VLSI APPLI
[9] DIFFUSION-BARRIERS IN LAYERED CONTACT STRUCTURES
NICOLET, MA
BARTUR, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 786 - 793
[10] DIFFUSION BARRIERS IN THIN-FILMS
NICOLET, MA
[J]. THIN SOLID FILMS, 1978, 52 (03) : 415 - 443