A STUDY OF VANADIUM AS DIFFUSION BARRIER BETWEEN ALUMINUM AND GADOLINIUM SILICIDE CONTACTS

被引：30

作者：

EIZENBERG, M ^{[1
]}

THOMPSON, RD ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 10期

关键词：

D O I：

10.1063/1.330030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：6891 / 6897

页数：7

相关论文

共 10 条

[1] [Anonymous], 1978, HDB BINARY PHASE DIA
[2] MICROSTRUCTURE AND SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDES FORMED ON SILICON
OHDOMARI, I
KUAN, TS
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 7020 - 7029
[3] PARALLEL SILICIDE CONTACTS
OHDOMARI, I
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3735 - 3739
[4] Runnalls O.J.C., 1963, J MET, V15, P687
[5] SCHOTTKY CONTACTS OF GD-PT AND GD-V ALLOYS ON N-SI AND P-SI
THOMPSON, R
EIZENBERG, M
TU, KN
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6763 - 6768
[6] CONTACT REACTION BETWEEN SI AND RARE-EARTH-METALS
THOMPSON, RD
TSAUR, BY
TU, KN
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (07) : 535 - 537
[7] LOW SCHOTTKY-BARRIER OF RARE-EARTH SILICIDE ON N-SI
TU, KN
THOMPSON, RD
TSAUR, BY
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (08) : 626 - 628
[8] ASTM7399 CARD
[9] ASTM2934 CARD
[10] ASTM2999 CARD