GIANT DISCRETE RESISTANCE FLUCTUATIONS OBSERVED IN NORMAL-METAL TUNNEL-JUNCTIONS

被引:21
作者
JIANG, XG
DUBSON, MA
GARLAND, JC
机构
[1] Department of Physics, Ohio State University, Columbus
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 09期
关键词
D O I
10.1103/PhysRevB.42.5427
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Giant discrete resistance fluctuations are reported in large (50×50 m2) tunnel junctions of Au-Al2O3-Au over the temperature range 4 140 K, with applied dc bias voltages of 0 2 V. The fluctuations are believed to result from single electrons trapped on defect sites within the insulating barrier of the tunnel junction. The temperature and bias-voltage dependence of the characteristic switching lifetimes of these fluctuations have been measured, and departures from previously reported behavior are observed. © 1990 The American Physical Society.
引用
收藏
页码:5427 / 5432
页数:6
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