EFFECT OF REACTIVE ION-BEAM ETCHING DAMAGE ON EXCITON ABSORPTION RECOVERY-TIME OF MULTIPLE QUANTUM-WELL WIRES

We studied the effect of process damage on exciton absorption recovery time of multiple quantum well narrow wires. The wires were fabricated to the order of 100 nm by focused ion beam lithography and subsequent reactive ion beam etching. The recovery time decreases with increased damage. The recovery times of the damaged samples slightly increase after thermal annealing. The effect of etching damage on the recovery time was discussed by the numerical calculation assuming nonradiative recombination by defects.