TEMPERATURE-DEPENDENCE OF THE EL2 METASTABILITY IN SEMIINSULATING GAAS - THERMAL HYSTERESIS BETWEEN THE METASTABLE AND REVERSE TRANSITIONS

被引:10
作者
JIMENEZ, J [1 ]
ALVAREZ, A [1 ]
CHAFAI, M [1 ]
BONNAFE, J [1 ]
机构
[1] UNIV MONTPELLIER 2,CTR ELECTR MONTPELLIER,F-34060 MONTPELLIER,FRANCE
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 19期
关键词
D O I
10.1103/PhysRevB.50.14112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The temperature dependence of the photoquenching of the EL2 level in semi-insulating GaAs is studied by photocurrent and thermally stimulated currents. The observations made in these experimental procedures together with other results reported in the literature reveal that the metastable transformation of EL2 cannot be fully achieved when the sample temperature is above 85 K. This observation is compared with the thermal recovery of the EL2 ground state from its metastable configuration EL2*, which is known to take place between 120 and 130 K; showing thus the existence of a conspicuous thermal hysteresis between both transitions, EL2→EL2* and EL2*→EL2. This is analyzed in terms of the existence of a level that would play the role of an actuator of the metastable transformation of EL2. The charge state of this level can be altered by both optical excitation and temperature. Above 85 K it would be thermally emptied, being in such a charge state configuration unable to activate the metastable transformation of EL2. © 1994 The American Physical Society.
引用
收藏
页码:14112 / 14118
页数:7
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