CHARGE-TRANSFER AS AN ALTERNATIVE TO METASTABILITY OF DEFECTS IN SEMI-INSULATING GAAS

被引：7

作者：

BENCHIGUER, T

CHRISTOFFEL, E

GOLTZENE, A

MARI, B

MEYER, B

SCHWAB, C

机构：

[1] Groupe “Recherches Physiques et Matériaux”, Centre de Recherches Nucléaires, Université Louise pasteur, Strausbourg, F-67037

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 09期

关键词：

Defects; EL2; EPR; GaAs; Photoquenching;

D O I：

10.1143/JJAP.29.L1569

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have compared the variations of different paramagnetic signals, including that of the AsGa -related antisite, as revealed during 1.2 eV light exposures at 4.2 K, with those observed during a subsequent warming up in several semi-insulating GaAs samples. In addition to a confirmation of the sequence of acceptor levels regarding their energy depth, these experiments suggest a possibility of a mere charge transfer mechanism instead of a metastability for the photoquenchable AsGa-related deep donors. © 1990 The Japan Society of Applied Physics.

引用

页码：L1569 / L1571

页数：3

共 9 条

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[2]

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