STEP STRUCTURE TRANSFORMATION-INDUCED BY DC ON VICINAL SI(111)

被引：54

作者：

NATORI, A

机构：

[1] The University of Electro-Communications, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 6A期

关键词：

STEP BUNCHING; STEP KINETICS; ELECTROMIGRATION; SI(111);

D O I：

10.1143/JJAP.33.3538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The step structure transformation between a regular step and a bunching structure on Si(111) induced by DC is studied by means of the extended BCF (Burton Cabrela Frank) theory, in which surface electromigration of Si adatoms is considered. The stability condition of a regular step under DC supply is clarified, in addition to that under AC supply. In the unstable condition, the step bunch grows from a small fluctuation of a regular step. The dynamics of the step structure transformation under DC are investigated by solving the kinetic equations on step positions at typical temperatures, and the associated bunching mechanisms are proposed based on the competition among the drift, evaporation and backward diffusion fluxes.

引用

收藏

页码：3538 / 3544

页数：7

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