REFLECTION ELECTRON-MICROSCOPY STUDY OF CLEAN SI(111) SURFACE RECONSTRUCTION DURING THE (7 X 7) REVERSIBLE (1 X-1) PHASE-TRANSITION

被引：69

作者：

LATYSHEV, AV

KRASILNIKOV, AB

ASEEV, AL

SOKOLOV, LV

STENIN, SI

机构：

[1] Institute of Semiconductor Physics, Academy of Sciences, the USSR

来源：

SURFACE SCIENCE | 1991年 / 254卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(91)90641-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The redistribution of about (4-6) x 10(14) cm-2 atoms on the clean silicon (111) surface during the reversible (7 x 7) reversible (1 x 1) transition has been revealed by the shift of monatomic steps and the change in size of two-dimensional sublimation and growth of islands. The results have been discussed together with the ellipsometric data indicating the presence of about 0.2 monolayer of adatoms on the Si(111)-(1 x 1) surface.

引用

页码：90 / 96

页数：7

共 18 条

[1]

ASEEV AL, 1985, DEFECTS CRYSTALS, P231

[2] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J].