PROCESS CONDITIONS FOR DEPOSITION OF GOOD QUALITY THIN-FILMS OF Y1BA2CU3O7-X SUPERCONDUCTOR ON ZRO2, SRTIO3 AND SI ZRO2 SUBSTRATES BY XECL PULSED EXCIMER LASER ABLATION

Thin films of Y1Ba2Cu3O7-x superconductor have been deposited on ZrO2, SrTiO3 and Si (with laser deposited ZrO2 buffer) using XeCl pulsed excimer laser (λ = 308 nm). From a study of the dependence of film properties on the process conditions adequate conditions have obtained for low temperature (< 680°C) deposition of good quality films on these substrates. Specifically, 90 K films were obtained on ZrO2 and SrTiO3 (Jc > 5 × 104 A cm-2 at 77 K) sustrates. On ZrO2, 500 Å films with Tc of 84 K could be deposited in a single process step. On Si, 69 K films were obtained by successive laser deposition of 0.3 μm ZrO2 diffusion barrier and 0.7 μm superconductor films. © 1990.