PROPERTIES OF GAN GROWN ON SAPPHIRE SUBSTRATES

被引：21

作者：

CROUCH, RK

DEBNAM, WJ

FRIPP, AL

机构：

来源：

JOURNAL OF MATERIALS SCIENCE | 1978年 / 13卷 / 11期

关键词：

D O I：

10.1007/BF00808049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2358 / 2364

页数：7

共 9 条

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[3]

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STEVENSON, DA .

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[6] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J].

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TIETJEN, JJ .

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[7] EFFECTS OF BUILT-IN STRAIN ON LUMINESCENCE AND ABSORPTION-SPECTRA OF GAN EPITAXIAL CRYSTALS [J].

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AOKI, M .

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[8]

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[9] OPTICAL-PROPERTIES OF GAN LIGHT-EMITTING DIODES [J].

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