IMPACT IONIZATION IN GAAS-MESFETS - COMMENTS

被引:16
作者
CANALI, C [1 ]
PACCAGNELLA, A [1 ]
ZANONI, E [1 ]
LANZIERI, C [1 ]
CETRONIO, A [1 ]
机构
[1] SELENIA SPA,DIREZ RIC,I-00131 ROME,ITALY
关键词
D O I
10.1109/55.75710
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:80 / 81
页数:2
相关论文
共 3 条
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    HUI, K
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    [J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (03) : 113 - 115
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    [J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 297 - 302
  • [3] LIGHT-EMISSION IN ALGAAS/GAAS HEMTS AND GAAS-MESFETS INDUCED BY HOT CARRIERS
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    BIGLIARDI, S
    CAPELLETTI, R
    LUGLI, P
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    PACCAGNELLA, A
    TESTA, N
    CANALI, C
    [J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (11) : 487 - 489