LIGHT-EMISSION IN ALGAAS/GAAS HEMTS AND GAAS-MESFETS INDUCED BY HOT CARRIERS

被引：34

作者：

ZANONI, E

BIGLIARDI, S

CAPELLETTI, R

LUGLI, P

MAGISTRALI, F

MANFREDI, M

PACCAGNELLA, A

TESTA, N

CANALI, C

机构：

[1] DIPARTIMENTO INGN MECCAN UNIV ROMA,TOR VERGATA,I-00173 ROME,ITALY

[2] TELETTRA SPA,I-20059 VIMERCATE,ITALY

[3] UNIV PARMA,DEPARTIMENTO FIS,I-43100 PARMA,ITALY

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 11期

关键词：

D O I：

10.1109/55.63009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Light emission in submicrometer gate AIGaAs/GaAs HEMT’s and GaAs MESFET’s has been observed at high drain bias values (>4.0 V). The spectral distribution of the emitted photons in the 1.7-2.9-eV range does not correspond to a simple Maxwellian distribution function of the electron energies in the channel. Light emission is observed in correspondence with nonnegligible gate and substrate hole currents, due to the collection of holes generated by impact ionization. © 1990 IEEE

引用

页码：487 / 489

页数：3

共 12 条

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