HOT-ELECTRON-INDUCED PHOTON ENERGIES IN N-CHANNEL MOSFETS OPERATING AT 77-K AND 300-K

[1] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376

[2] TWO-DIMENSIONAL NUMERICAL-SIMULATION OF ENERGY-TRANSPORT EFFECTS IN SI AND GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 970 - 977

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[4] Fukuma M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P621

[5] ELECTRON-ENERGY DISTRIBUTION FOR CALCULATION OF GATE LEAKAGE CURRENT IN MOSFETS [J]. SOLID-STATE ELECTRONICS, 1988, 31 (06) : 1089 - 1092

[6] INFRARED RADIATION FROM BREAKDOWN PLASMAS IN SI, GASB, AND GE - EVIDENCE FOR DIRECT FREE HOLE RADIATION [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01): : 301 - 310

[7] IIZUKA T, 1987, FAL JAP APPL PHYS M, P535

[8] HOT CARRIERS IN MICROPLASMAS AND THEIR RADIATION IN GERMANIUM AND SILICON [J]. PHYSICA STATUS SOLIDI, 1964, 6 (03): : 877 - 884

[9] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 346 - 353

[10] MOS2 - AN EFFICIENT MONTE-CARLO SIMULATOR FOR MOS DEVICES [J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1988, 7 (02) : 259 - 271

[1] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376

[2] TWO-DIMENSIONAL NUMERICAL-SIMULATION OF ENERGY-TRANSPORT EFFECTS IN SI AND GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 970 - 977

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[4] Fukuma M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P621

[5] ELECTRON-ENERGY DISTRIBUTION FOR CALCULATION OF GATE LEAKAGE CURRENT IN MOSFETS [J]. SOLID-STATE ELECTRONICS, 1988, 31 (06) : 1089 - 1092

[6] INFRARED RADIATION FROM BREAKDOWN PLASMAS IN SI, GASB, AND GE - EVIDENCE FOR DIRECT FREE HOLE RADIATION [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01): : 301 - 310

[7] IIZUKA T, 1987, FAL JAP APPL PHYS M, P535

[8] HOT CARRIERS IN MICROPLASMAS AND THEIR RADIATION IN GERMANIUM AND SILICON [J]. PHYSICA STATUS SOLIDI, 1964, 6 (03): : 877 - 884

[9] 1 MU-M MOSFET VLSI TECHNOLOGY .4. HOT-ELECTRON DESIGN CONSTRAINTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 346 - 353

[10] MOS2 - AN EFFICIENT MONTE-CARLO SIMULATOR FOR MOS DEVICES [J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1988, 7 (02) : 259 - 271