ELECTRON-ENERGY DISTRIBUTION FOR CALCULATION OF GATE LEAKAGE CURRENT IN MOSFETS

被引：30

作者：

GOLDSMAN, N ^{[1
]}

FREY, J ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 06期

关键词：

D O I：

10.1016/0038-1101(88)90410-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1089 / 1092

页数：4

共 14 条

[1] VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J].

COEN, RW ;

MULLER, RS .

SOLID-STATE ELECTRONICS, 1980, 23 (01) :35-40

[2]

CONWELL EM, 1967, SOLID STATE PHYSIC S, V9

[3] ALCOHOL-CONSUMPTION AND BLOOD-PRESSURE - SURVEY OF THE RELATIONSHIP AT A HEALTH-SCREENING CLINIC [J].

COOKE, KM ;

FROST, GW ;

THORNELL, IR ;

STOKES, GS .

MEDICAL JOURNAL OF AUSTRALIA, 1982, 1 (02) :65-69

[4] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J].

FANG, FF ;

FOWLER, AB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1825-+

[5]

FERRY DK, 1982, HDB SEMICONDUCTORS, P563

[6] TRADEOFFS AND ELECTRON-TEMPERATURE CALCULATIONS IN LIGHTLY DOPED DRAIN STRUCTURES [J].

FREY, J ;

GOLDSMAN, N .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) :28-30

[7]

HESS K, 1985, HOT ELECTRON TRANSPO, P201

[8]

Hu C., 1979, PROC INT ELECT DEVIC, P22, DOI [10.1109/IEDM.1979.189529, DOI 10.1109/IEDM.1979.189529]

[9] THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].

JACOBONI, C ;

REGGIANI, L .

REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705

[10]

Ko P. K., 1981, International Electron Devices Meeting, P600

← 1 2 →