MINORITY-CARRIER DIFFUSION LENGTH EFFECTS ON LIGHT-ADDRESSABLE POTENTIOMETRIC SENSOR (LAPS) DEVICES

被引：44

作者：

SARTORE, M ^{[1
]}

ADAMI, M ^{[1
]}

NICOLINI, C ^{[1
]}

BOUSSE, L ^{[1
]}

MOSTARSHED, S ^{[1
]}

HAFEMAN, D ^{[1
]}

机构：

[1] MOLEC DEVICES CORP, MENLO PK, CA 94025 USA

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1992年 / 32卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(92)80025-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Alternating photocurrent measurements with light-addressable potentiometric sensors (LAPSs) have been used to monitor pH, redox potential, and ionic concentrations at discrete locations in an electrolyte in contact with LAPS devices. We report here the results of AC photocurrent measurements with insulated semiconductor LAPS devices where the semiconductor either is illuminated through the insulator (frontside) or alternatively from the opposite side (backside). Such comparative AC photocurrent measurements were made with semiconductors of varied thickness, at varied frequency of light intensity modulation, and at several different photoexcitation wavelengths. The results are fit to a theoretical expression which predicts the dependence of photocurrent on modulation frequency, wafer thickness, bulk minority carrier lifetime, and surface recombination velocity. The results are useful to optimize the design of LAPS devices with regard to these parameters. The results also predict optimal conditions for minimal lateral spacing of adjacent sensing areas in LAPS devices.

引用

页码：431 / 436

页数：6

共 18 条

[1] BIOSENSORS FOR DETECTION OF ENZYMES IMMOBILIZED IN MICROVOLUME REACTION CHAMBERS [J].

BOUSSE, L ;

KIRK, G ;

SIGAL, G .

SENSORS AND ACTUATORS B-CHEMICAL, 1990, 1 (1-6) :555-560

[2] TIME-DEPENDENCE OF THE CHEMICAL RESPONSE OF SILICON-NITRIDE SURFACES [J].

BOUSSE, L ;

HAFEMAN, D ;

TRAN, N .

SENSORS AND ACTUATORS B-CHEMICAL, 1990, 1 (1-6) :361-367

[3]

Bousse L. J., 1991, TRANSDUCERS '91. 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers (Cat. No.91CH2817-5), P74, DOI 10.1109/SENSOR.1991.148802

[4]

Bousse L. J., 1990, IEEE SOLID STATE SEN, P173

[5] PROPERTIES OF GOLD IN SILICON [J].